1. Lattice-matched ▫$Ta_3N_5/Nb_5N_6$▫ interface enables a bulk charge separation efficiency of close to 100%Yitong Liu, Zeyu Fan, Ronghua Li, Andraž Mavrič, Iztok Arčon, Matjaž Valant, Gregor Kapun, Beibei Zhang, Chao Feng, Zemin Zhang, 2025, original scientific article Abstract: The interface between the semiconductor light absorber
and the metal electrode is critical for facilitating the extraction of photogenerated charges in photoelectrodes. Achieving a lattice-matched
semiconductor/electrode interface with low defect density is highly desirable but remains a challenge for Ta3N5 photoanodes. In this study, we synthesized niobium nitride thin film electrodes with controllable crystallographic phases to achieve a lattice-matched Ta3N5/Nb5N6 back contact. This results in an enhanced crystallinity of the Ta3N5 film and
reduced interfacial defect density. Consequently, the photoanode with the lattice-matched back contact attains a record half-cell solar-to-hydrogen conversion efficiency of 4.1%, attributed to the bulk carrier separation efficiency of nearly 100%. This work highlights lattice-matching as an effective strategy to enhance the efficiency of thin film-based solar energy conversion devices.
Keywords: photoelectrochemistry, photoanode, interface, semiconductors
Published in RUNG: 28.03.2025; Views: 1149; Downloads: 11
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2. Designing atomic interface in ▫$Sb_2S_3/CdS$▫ heterojunction for efficient solar water splittingMinji Yang, Zeyu Fan, Jinyan Du, Chao Feng, Ronghua Li, Beibei Zhang, Nadiia Pastukhova, Matjaž Valant, Matjaž Finšgar, Andraž Mavrič, Yanbo Li, 2024, original scientific article Abstract: In the emerging Sb2S3‐based solar energy conversion devices, a CdS buffer layer prepared by chemical bath deposition is commonly used to improve the separation of photogenerated electron‐hole pairs. However, the cation diffusion at the Sb2S3/CdS interface induces detrimental defects but is often overlooked. Designing a stable interface in the Sb2S3/CdS heterojunction is essential to achieve high solar energy conversion efficiency. As a proof of concept, this study reports that the modification of the Sb2S3/CdS heterojunction with an ultrathin Al2O3 interlayer effectively suppresses the interfacial defects by preventing the diffusion of Cd2+ cations into the Sb2S3 layer. As a result, a water‐splitting photocathode based on Ag:Sb2S3/Al2O3/CdS heterojunction achieves a significantly improved half‐cell solar‐to‐hydrogen efficiency of 2.78% in a neutral electrolyte, as compared to 1.66% for the control Ag:Sb2S3/CdS device. This work demonstrates the importance of designing atomic interfaces and may provide a guideline for the fabrication of high‐performance stibnite‐type semiconductor‐based solar energy conversion devices.
Keywords: alumina, defect passivation, interface engineering, photoelectrochemical water splitting
Published in RUNG: 11.03.2024; Views: 2950; Downloads: 7
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