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1. Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate Yaqi Wang, Siddharth Alur, Yogesh Sharma, Fei Tong, Resham Thapa, Patrick Gartland, Tamara Issacs-Smith, Claude Ahyi, John Williams, Minseo Park, Mark Johnson, Tanya Paskova, Edward A Preble, Keith Evans, 2011, original scientific article Found in: ključnih besedah Keywords: free-standing GaN substrate, Ultra-low leakage and high breakdown Schottky diodes Published: 16.01.2017; Views: 3548; Downloads: 0 Fulltext (266,96 KB)

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