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52. Graphene-induced enhancement of n-type mobility in perylenediimide thin filmsGvido Bratina, Egon Pavlica, Srinivasa Rao Pathipati, Andrea Schlierf, Mirella El Gemayel, Paolo Samorì, Vincenzo PALERMO, 2014, original scientific article Keywords: grafen, transportne lastnosti, organski tankoslojni tranzistorji, tok fotovzbujenih nosilcev naboja
Published in RUNG: 16.06.2016; Views: 4877; Downloads: 134
 Link to full text |
53. Vpliv dielektrika na delovanje organskega tankoplastnega tranzistorja: organski in anorganski dielektrikiAnže Peternel, 2015, undergraduate thesis Abstract: Organski tankoplastni tranzistorji (OTFT) so polprevodniški elementi, ki opravljajo funkcijo stikal v elektronskih napravah. Med njihovo najpomembnejšo lastnost štejemo
hitrost preklapljanja električnega toka. Hitrost preklapljanja je odvisna od mobilnosti nosilcev naboja, ta
pa je odvisna predvsem od stične površine med plastjo dielektrika in polprevodnika.
Preučili smo vpliv dielektrika
na mobilnost vrzeli v OTFT-jih s polprevodnim polimerom
poli(3-heksiltiofen) (P3HT). Primerjali smo dielektrike
parilen C, termični oksid (SiO2) in oktadekiltriklorosilan
(OTS). Ugotovili smo, da na mobilnost vrzeli močno vplivata
hrapavost in polarnost dielektrika. Za najboljši dielektrik
se je izkazal OTS, saj je bila mobilnost vrzeli najvišja
glede na ostale preučene OTFT-je. Najvišja izmerjena
mobilnost vrzeli je znašala 0.03 cm^2 V^−1 s^−1 . Pri
OTFT-jih z dielektrikom OTS smo izmerili upor stika med
elektrodama in plastjo polprevodnika. Upor je znašal 1 MΩ in
predstavlja veliko oviro za tok, ki teče skozi OTFT.
Iz pridobljenih rezultatov sklepamo, da so OTFT-ji z organskimi dielektriki boljši kot OTFT-ji z dielektrikom
SiO2, če je njihova površina ravna in hidrofobna. Sklepamo
da z optimizacijo upora stika med elektrodo in plastjo
polprevodnika lahko pripravimo OTFT-je, ki so primerni za
izdelavo fleksibilne organske elektronike.
Keywords: konjugirani polimeri, P3HT, termični oksid SiO2, parilen C, OTS, tokovno-napetostna karakteristika, mobilnost nosilcev naboja, pragovna napetost, upor stika kovina – polprevodnik
Published in RUNG: 28.09.2015; Views: 8406; Downloads: 289
 Full text (10,50 MB) |
54. Transport električnega naboja v organskih polprevodnikih, simulacija po metodi Monte CarloRobert Hudej, Gvido Bratina, Egon Pavlica, 2003, original scientific article Abstract: The electric-charge transport in organic semiconductors is essentially different to the transport in ordered inorganic crystals. The reason is in thelocalization of the energy states, which act as charge-carrier transport channels between molecules. Consequently, the determination of the basic transport parameters in organic materials is inherently more involved than in their inorganic counterparts. The analytical methods that are used to describe charge transport in inorganic materials are unsuitable, since they are based on the extended electronic energy structure. We report here on the simulation of charge transport in organic semiconductor thin films. The simulation is based on the Monte Carlo method and describes the charge-carrier transport within the framework of carrier hopping between the sites. We employed a Gaussian energy distribution of the hopping sites with disorder elements. The degree of disorder is characterized by the width of the Gaussian distribution and is measured in eV units. The results of the transport simulation in 3,4,9,10-perylenedianhydride tetracarboxylic acid (PTCDA) show that the photogenerated charge-carrier current depends on the film thickness, temperature and disorder degree. The simulated photocurrents have the same amplitude in thick films as in the thin films, but the overall shape of the I(t) curve is more dispersive in thin films. The charge-carrier mobility decreases with the increasing degree of disorder at a given temperature. The simulation of the photogenerated positive charge carriers current matches with the time-of-flight experiment in a glass/ITO/PTCDA(600 nm)/In heterostructure at room temperature and an applied bias voltage of 8 V.
Keywords: neurejeni kristali, metoda Monte Carlo, organski polprevodniki, transport naboja, PTCDA, tranzientne meritve
Published in RUNG: 10.07.2015; Views: 5907; Downloads: 23
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55. Transient photocurrents in oligothiophene-based ultrathin film transistorsEgon Pavlica, Robert Hudej, Gvido Bratina, M. Leufgen, U. Bass, J. Geurts, L. W. Molenkamp, T. Muck, V. Wagner, 2004, published scientific conference contribution abstract Published in RUNG: 15.10.2013; Views: 6929; Downloads: 40
Link to full text |
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