1. Electrical characteristics of the vertical GaN rectifiers fabricated on bulk GaN waferYaqi Wang, Hui Xu, Siddharth Alur, Yogesh Sharma, Fei Tong, Patrick Gartland, Tamara Issacs-Smith, Claude Ahyi, John Williams, Minseo Park, Ginger Wheeler, Mark Johnson, Andrew A. Allerman, Andrew Hanser, Tanya Paskova, Edward A. Preble, Keith R. Evans, 2011, original scientific article Keywords: GaN, rectifier
Published in RUNG: 17.01.2017; Views: 5725; Downloads: 0
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2. Biofunctionalized AlGaN/GaN high electron mobility transistor for DNA hybridization detectionResham Thapa, Siddharth Alur, Kyusang Kim, Fei Tong, Yogesh Sharma, Moonil Kim, Claude Ahyi, Jing Dai, Jong Wook Hong, Michael Bozack, John Williams, Ahjeong Son, Amir Dabiran, Minseo Park, 2012, original scientific article Keywords: AlGaN/GaN HEMT, DNA hybridization detection
Published in RUNG: 16.01.2017; Views: 6197; Downloads: 0
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3. Flexible organic/inorganic hybrid solar cells based on conjugated polymer and ZnO nanorod arrayFei Tong, Kyusang Kim, Daniel Martinez, Resham Thapa, Ayayi Ahyi, John Williams, Dong-Joo Kim, Sungkoo Lee, Eunhee Lim, Kyeong K Lee, Minseo ParK, 2012, original scientific article Keywords: organic/inorganic hybrid solar cells, conjugated polymer, ZnO nanorod array
Published in RUNG: 16.01.2017; Views: 6099; Downloads: 0
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4. Growth of ZnO Nanorod Arrays on Flexible Substrates: Effect of Precursor Solution ConcentrationFei Tong, Kyusang Kim, Yaqi Wang, Resham Thapa, Yogesh Sharma, Aaron Modic, Ayayi Ahyi, Tamara Issacs-Smith, John Williams, Hosang Ahn, Hyejin Park, Dong-Joo Kim, Sungkoo Lee, Eunhee Lim, Kyeong K. Lee, Minseo Park, 2012, original scientific article Keywords: ZnO Nanorod Arrays, ITO-PET, solution growth
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5. Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrateYaqi Wang, Siddharth Alur, Yogesh Sharma, Fei Tong, Resham Thapa, Patrick Gartland, Tamara Issacs-Smith, Claude Ahyi, John Williams, Minseo Park, Mark Johnson, Tanya Paskova, Edward A Preble, Keith Evans, 2011, original scientific article Keywords: free-standing GaN substrate, Ultra-low leakage and high breakdown Schottky diodes
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