| Title: | Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate |
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| Authors: | ID Wang, Yaqi, Department of Physics, Auburn University, Auburn, AL 36849, USA (Author)
ID Alur, Siddharth, Department of Physics, Auburn University, Auburn, AL 36849, USA (Author)
ID Sharma, Yogesh, Department of Physics, Auburn University, Auburn, AL 36849, USA (Author)
ID Tong, Fei, Department of Physics, Auburn University, Auburn, AL 36849, USA (Author)
ID Thapa, Resham, Department of Physics, Auburn University, Auburn, AL 36849, USA (Author)
ID Gartland, Patrick, Department of Physics, Auburn University, Auburn, AL 36849, USA (Author)
ID Issacs-Smith, Tamara, Department of Physics, Auburn University, Auburn, AL 36849, USA (Author)
ID Ahyi, Claude, Department of Physics, Auburn University, Auburn, AL 36849, USA (Author)
ID Williams, John, Department of Physics, Auburn University, Auburn, AL 36849, USA (Author)
ID Park, Minseo, Department of Physics, Auburn University, Auburn, AL 36849, USA (Author)
ID Johnson, Mark, Department of Physics, Auburn University, Auburn, AL 36849, USA (Author)
ID Paskova, Tanya, Department of Physics, Auburn University, Auburn, AL 36849, USA (Author)
ID Preble, Edward A, Department of Physics, Auburn University, Auburn, AL 36849, USA (Author)
ID Evans, Keith, Department of Physics, Auburn University, Auburn, AL 36849, USA (Author) |
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| Files: |
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| Language: | English |
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| Work type: | Not categorized |
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| Typology: | 1.01 - Original Scientific Article |
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| Organization: | UNG - University of Nova Gorica
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| Keywords: | free-standing GaN substrate, Ultra-low leakage and high breakdown Schottky diodes |
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| Year of publishing: | 2011 |
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| Number of pages: | 4 |
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| Numbering: | 1, 26 |
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| PID: | 20.500.12556/RUNG-2896-756283ec-cf5b-a33a-3552-fbc536a4a866 |
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| COBISS.SI-ID: | 4635131 |
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| DOI: | http://dx.doi.org/10.1088/0268-1242/26/2/022002 |
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| NUK URN: | URN:SI:UNG:REP:6SGICGTC |
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| Publication date in RUNG: | 16.01.2017 |
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| Views: | 5144 |
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| Downloads: | 0 |
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