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Title:Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate
Authors:Wang, Yaqi (Author)
Alur, Siddharth (Author)
Sharma, Yogesh (Author)
Tong, Fei (Author)
Thapa, Resham (Author)
Gartland, Patrick (Author)
Issacs-Smith, Tamara (Author)
Ahyi, Claude (Author)
Williams, John (Author)
Park, Minseo (Author)
Johnson, Mark (Author)
Paskova, Tanya (Author)
Preble, Edward A (Author)
Evans, Keith (Author)
Files:This document has no files. This document may have a phisical copy in the library of the organization, check the status via COBISS. Link is opened in a new window
Work type:Not categorized (r6)
Tipology:1.01 - Original Scientific Article
Organization:UNG - University of Nova Gorica
Keywords:free-standing GaN substrate, Ultra-low leakage and high breakdown Schottky diodes
Year of publishing:2011
Number of pages:4
Numbering:26, 1
COBISS_ID:4635131 Link is opened in a new window
DOI: Link is opened in a new window
Categories:Document is not linked to any category.
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Title:Semiconductor Science and Technology
Publisher:IOP Publishing: Hybrid Open Access
Year of publishing:2011