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Title:Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate
Authors:ID Wang, Yaqi, Department of Physics, Auburn University, Auburn, AL 36849, USA (Author)
ID Alur, Siddharth, Department of Physics, Auburn University, Auburn, AL 36849, USA (Author)
ID Sharma, Yogesh, Department of Physics, Auburn University, Auburn, AL 36849, USA (Author)
ID Tong, Fei, Department of Physics, Auburn University, Auburn, AL 36849, USA (Author)
ID Thapa, Resham, Department of Physics, Auburn University, Auburn, AL 36849, USA (Author)
ID Gartland, Patrick, Department of Physics, Auburn University, Auburn, AL 36849, USA (Author)
ID Issacs-Smith, Tamara, Department of Physics, Auburn University, Auburn, AL 36849, USA (Author)
ID Ahyi, Claude, Department of Physics, Auburn University, Auburn, AL 36849, USA (Author)
ID Williams, John, Department of Physics, Auburn University, Auburn, AL 36849, USA (Author)
ID Park, Minseo, Department of Physics, Auburn University, Auburn, AL 36849, USA (Author)
ID Johnson, Mark, Department of Physics, Auburn University, Auburn, AL 36849, USA (Author)
ID Paskova, Tanya, Department of Physics, Auburn University, Auburn, AL 36849, USA (Author)
ID Preble, Edward A, Department of Physics, Auburn University, Auburn, AL 36849, USA (Author)
ID Evans, Keith, Department of Physics, Auburn University, Auburn, AL 36849, USA (Author)
Files: This document has no files that are freely available to the public. This document may have a physical copy in the library of the organization, check the status via COBISS. Link is opened in a new window
Language:English
Work type:Not categorized
Typology:1.01 - Original Scientific Article
Organization:UNG - University of Nova Gorica
Keywords:free-standing GaN substrate, Ultra-low leakage and high breakdown Schottky diodes
Year of publishing:2011
Number of pages:4
Numbering:1, 26
PID:20.500.12556/RUNG-2896-756283ec-cf5b-a33a-3552-fbc536a4a866 New window
COBISS.SI-ID:4635131 New window
DOI:http://dx.doi.org/10.1088/0268-1242/26/2/022002 New window
NUK URN:URN:SI:UNG:REP:6SGICGTC
Publication date in RUNG:16.01.2017
Views:4337
Downloads:0
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Record is a part of a journal

Title:Semiconductor Science and Technology
Publisher:IOP Publishing: Hybrid Open Access
Year of publishing:2011
ISSN:0268-1242

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