| Title: | Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate |
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| Authors: | Wang, Yaqi (Author)
Alur, Siddharth (Author)
Sharma, Yogesh (Author)
Tong, Fei (Author)
Thapa, Resham (Author)
Gartland, Patrick (Author)
Issacs-Smith, Tamara (Author)
Ahyi, Claude (Author)
Williams, John (Author)
Park, Minseo (Author)
Johnson, Mark (Author)
Paskova, Tanya (Author)
Preble, Edward A (Author)
Evans, Keith (Author) |
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| Files: | This document has no files. This document may have a phisical copy in the library of the organization, check the status via COBISS.  |
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| Language: | English |
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| Work type: | Not categorized (r6) |
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| Tipology: | 1.01 - Original Scientific Article |
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| Organization: | UNG - University of Nova Gorica |
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| Keywords: | free-standing GaN substrate, Ultra-low leakage and high breakdown Schottky diodes |
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| Year of publishing: | 2011 |
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| Number of pages: | 4 |
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| Numbering: | 26, 1 |
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| COBISS_ID: | 4635131 |
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| URN: | URN:SI:UNG:REP:6SGICGTC |
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| DOI: | http://dx.doi.org/10.1088/0268-1242/26/2/022002 |
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| Views: | 3543 |
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| Downloads: | 0 |
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| Metadata: |     |
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| Categories: | Document is not linked to any category. |
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