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Title:Electrical characteristics of the vertical GaN rectifiers fabricated on bulk GaN wafer
Authors:Wang, Yaqi (Author)
Xu, Hui (Author)
Alur, Siddharth (Author)
Sharma, Yogesh (Author)
Tong, Fei (Author)
Gartland, Patrick (Author)
Issacs-Smith, Tamara (Author)
Ahyi, Claude (Author)
Williams, John (Author)
Park, Minseo (Author)
Wheeler, Ginger (Author)
Johnson, Mark (Author)
Allerman, Andrew A. (Author)
Hanser, Andrew (Author)
Paskova, Tanya (Author)
Preble, Edward A. (Author)
Evans, Keith R. (Author)
Files:This document has no files. This document may have a phisical copy in the library of the organization, check the status via COBISS. Link is opened in a new window
Language:English
Work type:Not categorized (r6)
Tipology:1.01 - Original Scientific Article
Organization:UNG - University of Nova Gorica
Keywords:GaN, rectifier
Year of publishing:2011
Number of pages:3
Numbering:8
COBISS_ID:4638971 Link is opened in a new window
URN:URN:SI:UNG:REP:LSUDYZ1H
DOI:10.1002/pssc.201001158 Link is opened in a new window
Views:2834
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Record is a part of a journal

Title:physica status solidi (c)
Publisher:Wiley: 12 months
ISSN:1862-6351
Year of publishing:2011

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