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Title:Electrical characteristics of the vertical GaN rectifiers fabricated on bulk GaN wafer
Authors:Wang, Yaqi (Author)
Xu, Hui (Author)
Alur, Siddharth (Author)
Sharma, Yogesh (Author)
Tong, Fei (Author)
Gartland, Patrick (Author)
Issacs-Smith, Tamara (Author)
Ahyi, Claude (Author)
Williams, John (Author)
Park, Minseo (Author)
Wheeler, Ginger (Author)
Johnson, Mark (Author)
Allerman, Andrew A. (Author)
Hanser, Andrew (Author)
Paskova, Tanya (Author)
Preble, Edward A. (Author)
Evans, Keith R. (Author)
Files:This document has no files. This document may have a phisical copy in the library of the organization, check the status via COBISS. Link is opened in a new window
Work type:Not categorized (r6)
Tipology:1.01 - Original Scientific Article
Organization:UNG - University of Nova Gorica
Keywords:GaN, rectifier
Year of publishing:2011
Number of pages:3
COBISS_ID:4638971 Link is opened in a new window
DOI:10.1002/pssc.201001158 Link is opened in a new window
Categories:Document is not linked to any category.
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Title:physica status solidi (c)
Publisher:Wiley: 12 months
Year of publishing:2011