| Title: | Electrical characteristics of the vertical GaN rectifiers fabricated on bulk GaN wafer |
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| Authors: | Wang, Yaqi (Author)
Xu, Hui (Author)
Alur, Siddharth (Author)
Sharma, Yogesh (Author)
Tong, Fei (Author)
Gartland, Patrick (Author)
Issacs-Smith, Tamara (Author)
Ahyi, Claude (Author)
Williams, John (Author)
Park, Minseo (Author)
Wheeler, Ginger (Author)
Johnson, Mark (Author)
Allerman, Andrew A. (Author)
Hanser, Andrew (Author)
Paskova, Tanya (Author)
Preble, Edward A. (Author)
Evans, Keith R. (Author) |
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| Files: | This document has no files. This document may have a phisical copy in the library of the organization, check the status via COBISS.  |
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| Language: | English |
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| Work type: | Not categorized (r6) |
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| Tipology: | 1.01 - Original Scientific Article |
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| Organization: | UNG - University of Nova Gorica |
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| Keywords: | GaN, rectifier |
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| Year of publishing: | 2011 |
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| Number of pages: | 3 |
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| Numbering: | 8 |
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| COBISS_ID: | 4638971 |
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| URN: | URN:SI:UNG:REP:LSUDYZ1H |
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| DOI: | 10.1002/pssc.201001158 |
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| Views: | 3661 |
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| Downloads: | 0 |
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| Metadata: |     |
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| Categories: | Document is not linked to any category. |
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