Your browser does not allow JavaScript!
JavaScript is necessary for the proper functioning of this website. Please enable JavaScript or use a modern browser.
University of Nova Gorica
University
Study
Research
Repository of University of Nova Gorica
About
Search
Browse
Statistics
Login
Show document
A+
|
A-
|
|
SLO
|
ENG
Title:
Role of transport band edge variation on delocalized charge transport in high-mobility crystalline organic semiconductors
Authors:
ID
Bratina, Gvido
(Author)
ID
Kadashchuk, Andrey
(Author)
ID
Pavlica, Egon
(Author)
ID
Tong, Fei
(Author), et al.
Files:
This document has no files that are freely available to the public. This document may have a physical copy in the library of the organization, check the status via
COBISS.
Language:
English
Work type:
Not categorized
Typology:
1.01 - Original Scientific Article
Organization:
UNG - University of Nova Gorica
Abstract:
We demonstrate that the degree of charge delocalization has a strong impact on polarization energy and thereby on the position of the transport band edge in organic semiconductors. This gives rise to long-range potential fluctuations, which govern the electronic transport through delocalized states in organic crystalline layers. This concept is employed to formulate an analytic model that explains a negative field dependence coupled with a positive temperature dependence of the charge mobility observed by a lateral time-of-flight technique in a high-mobility crystalline organic layer. This has important implications for the further understanding of the charge transport via delocalized states in organic semiconductors.
Keywords:
organic semiconducotrs
,
time of flight
,
transport
Year of publishing:
2017
Number of pages:
125202-125208
Numbering:
96
PID:
20.500.12556/RUNG-3266-e600200a-e2ff-503d-9ece-1c63337c4a98
COBISS.SI-ID:
4915195
NUK URN:
URN:SI:UNG:REP:BN4JDYR5
Publication date in RUNG:
13.09.2017
Views:
5210
Downloads:
0
Metadata:
Cite this work
Plain text
BibTeX
EndNote XML
EndNote/Refer
RIS
ABNT
ACM Ref
AMA
APA
Chicago 17th Author-Date
Harvard
IEEE
ISO 690
MLA
Vancouver
:
Copy citation
Average score:
(0 votes)
Your score:
Voting is allowed only for
logged in
users.
Share:
Hover the mouse pointer over a document title to show the abstract or click on the title to get all document metadata.
Record is a part of a journal
Title:
Physical Review B
Shortened title:
Phys. Rev. B
Year of publishing:
2017
Document is financed by a project
Funder:
ARRS - Slovenian Research Agency
Project number:
N1-0024
Licences
License:
CC BY-NC-ND 4.0, Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International
Link:
http://creativecommons.org/licenses/by-nc-nd/4.0/
Description:
The most restrictive Creative Commons license. This only allows people to download and share the work for no commercial gain and for no other purposes.
Licensing start date:
13.09.2017
Back