Repository of University of Nova Gorica

Show document
A+ | A- | Help | SLO | ENG

Title:Role of transport band edge variation on delocalized charge transport in high-mobility crystalline organic semiconductors
Authors:ID Bratina, Gvido (Author)
ID Kadashchuk, Andrey (Author)
ID Pavlica, Egon (Author)
ID Tong, Fei (Author), et al.
Files: This document has no files that are freely available to the public. This document may have a physical copy in the library of the organization, check the status via COBISS. Link is opened in a new window
Language:English
Work type:Not categorized
Typology:1.01 - Original Scientific Article
Organization:UNG - University of Nova Gorica
Abstract:We demonstrate that the degree of charge delocalization has a strong impact on polarization energy and thereby on the position of the transport band edge in organic semiconductors. This gives rise to long-range potential fluctuations, which govern the electronic transport through delocalized states in organic crystalline layers. This concept is employed to formulate an analytic model that explains a negative field dependence coupled with a positive temperature dependence of the charge mobility observed by a lateral time-of-flight technique in a high-mobility crystalline organic layer. This has important implications for the further understanding of the charge transport via delocalized states in organic semiconductors.
Keywords:organic semiconducotrs, time of flight, transport
Year of publishing:2017
Number of pages:125202-125208
Numbering:96
PID:20.500.12556/RUNG-3266-e600200a-e2ff-503d-9ece-1c63337c4a98 New window
COBISS.SI-ID:4915195 New window
NUK URN:URN:SI:UNG:REP:BN4JDYR5
Publication date in RUNG:13.09.2017
Views:5636
Downloads:0
Metadata:XML DC-XML DC-RDF
:
BRATINA, Gvido, KADASHCHUK, Andrey, PAVLICA, Egon and TONG, Fei, 2017, Role of transport band edge variation on delocalized charge transport in high-mobility crystalline organic semiconductors. Physical  Review B [online]. 2017. Vol. 96, p. 125202–125208. [Accessed 14 April 2025]. Retrieved from: https://repozitorij.ung.si/IzpisGradiva.php?lang=eng&id=3266
Copy citation
  
Average score:
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
(0 votes)
Your score:Voting is allowed only for logged in users.
Share:Bookmark and Share


Hover the mouse pointer over a document title to show the abstract or click on the title to get all document metadata.

Record is a part of a journal

Title:Physical Review B
Shortened title:Phys. Rev. B
Year of publishing:2017

Document is financed by a project

Funder:ARRS - Slovenian Research Agency
Project number:N1-0024

Licences

License:CC BY-NC-ND 4.0, Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International
Link:http://creativecommons.org/licenses/by-nc-nd/4.0/
Description:The most restrictive Creative Commons license. This only allows people to download and share the work for no commercial gain and for no other purposes.
Licensing start date:13.09.2017

Back