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Title:CVD Growth of Molybdenum Diselenide Surface Structures with Tailored Morphology
Authors:ID Sial, M. Naeem, Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of China Chengdu 610054, P. R. China (Author)
ID Muhammad, Usman, Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of China Chengdu 610054, P. R. China (Author)
ID Zheng, Binjie, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China (Author)
ID Yu, Yanan, Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of China Chengdu 610054, P. R. China (Author)
ID Mavrič, Andraž, University of Nova Gorica, Materials Research Laboratory, Vipavska 13, SI-5000 Nova Gorica, Slovenia. (Author)
ID Qing, Fangzhu, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China (Author)
ID Valant, Matjaž, University of Nova Gorica, Materials Research Laboratory, Vipavska 13, SI-5000 Nova Gorica, Slovenia. (Author)
ID Wang, Zhiming M., Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of China Chengdu 610054, P. R. China (Author)
Files:.pdf 06_CrystEngComm_CVD_Growth_of_Molybdenum_Diselenide_Surface_Structures_with_Tailored_Morphology.pdf (2,68 MB)
MD5: E8E3629FA9F2221D1F636C5F62C89D76
 
Language:English
Work type:Not categorized
Typology:1.01 - Original Scientific Article
Organization:UNG - University of Nova Gorica
Abstract:Controllable atmospheric pressure CVD has been optimized to grow transition metal dichalcogenide MoSe2 with tunable morphology at 750 °C on a silicon substrate with a native oxide layer of 250 nm. Utilizing tetrapotassium perylene-3,4,9,10-tetracarboxylate (PTAS) as a seed promoter and varying the vertical distance between the substrate and the precursor MoO3, different morphologies of MoSe2 were achieved, including 2D triangles, hexagons, 3D pyramids and vertically aligned MoSe2 sheets. We find that the shape of MoSe2 is highly dependent upon the distance h between the substrate and the precursor. The change in the morphology is attributed to the confinement of vapor (MoO3 and Se) precursors and their concentrations due to the change in h. These results are helpful in improving our understanding about the factors which influence the morphology (shape evolution) and also the continuous growth of MoSe2 films.
Keywords:Transition metal dichalcogenides, 2D materials, Seed promotor, Chemical vapor deposition, Molybdenum diselenide
Publication version:Author Accepted Manuscript
Year of publishing:2018
Number of pages:4867-4874
Numbering:20, 33
PID:20.500.12556/RUNG-4025-d5a25bfa-fdb3-513e-644b-18bbdb1624d3 New window
COBISS.SI-ID:5190139 New window
DOI:10.1039/C8CE00917A New window
NUK URN:URN:SI:UNG:REP:YHCIHRZQ
Publication date in RUNG:20.08.2018
Views:4743
Downloads:18
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Record is a part of a journal

Title:CrystEngComm
Shortened title:CrystEngComm
Publisher:Royal Society of Chemistry
Year of publishing:2018
ISSN:1466-8033

Document is financed by a project

Funder:ARRS - Slovenian Research Agency
Project number:P2-0377

Licences

License:CC BY-NC-ND 4.0, Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International
Link:http://creativecommons.org/licenses/by-nc-nd/4.0/
Description:The most restrictive Creative Commons license. This only allows people to download and share the work for no commercial gain and for no other purposes.
Licensing start date:20.08.2018

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