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Title:CVD Growth of Molybdenum Diselenide Surface Structures with Tailored Morphology
Authors:Sial, M. Naeem (Author)
Muhammad, Usman (Author)
Zheng, Binjie (Author)
Yu, Yanan (Author)
Mavrič, Andraž (Author)
Qing, Fangzhu (Author)
Valant, Matjaž (Author)
Wang, Zhiming M. (Author)
Files:This document has no files. This document may have a phisical copy in the library of the organization, check the status via COBISS. Link is opened in a new window
Language:English
Work type:Not categorized (r6)
Tipology:1.01 - Original Scientific Article
Organization:UNG - University of Nova Gorica
Abstract:Controllable atmospheric pressure CVD has been optimized to grow transition metal dichalcogenide MoSe2 with tunable morphology at 750 °C on a silicon substrate with a native oxide layer of 250 nm. Utilizing tetrapotassium perylene-3,4,9,10-tetracarboxylate (PTAS) as a seed promoter and varying the vertical distance between the substrate and the precursor MoO3, different morphologies of MoSe2 were achieved, including 2D triangles, hexagons, 3D pyramids and vertically aligned MoSe2 sheets. We find that the shape of MoSe2 is highly dependent upon the distance h between the substrate and the precursor. The change in the morphology is attributed to the confinement of vapor (MoO3 and Se) precursors and their concentrations due to the change in h. These results are helpful in improving our understanding about the factors which influence the morphology (shape evolution) and also the continuous growth of MoSe2 films.
Keywords:Transition metal dichalcogenides, 2D materials, Seed promotor, Chemical vapor deposition, Molybdenum diselenide
Year of publishing:2018
Number of pages:4867-4874
Numbering:33, 20
COBISS_ID:5190139  Link is opened in a new window
URN:URN:SI:UNG:REP:YHCIHRZQ
DOI:10.1039/C8CE00917A Link is opened in a new window
License:CC BY-NC-ND 4.0
This work is available under this license: Creative Commons Attribution Non-Commercial No Derivatives 4.0 International
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Record is a part of a journal

Title:CrystEngComm
Shortened title:CrystEngComm
Publisher:Royal Society of Chemistry
ISSN:1466-8033
Year of publishing:2018

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