| Title: | EPR parameters of E' centers in v-SiO2 from first-principles calculations |
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| Authors: | Giacomazzi, Luigi (Author)
Martin-Samos, Layla (Author)
Boukenter, A. (Author)
Ouerdane, Youcef (Author)
Girard, Sylvain (Author)
Richard, Nicolas (Author) |
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| Files: | This document has no files. This document may have a phisical copy in the library of the organization, check the status via COBISS.  |
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| Language: | English |
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| Work type: | Not categorized (r6) |
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| Tipology: | 1.01 - Original Scientific Article |
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| Organization: | UNG - University of Nova Gorica |
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| Keywords: | silica, paramagnetic defects, EPR, disordered semiconductors |
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| Year of publishing: | 2014 |
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| Number of pages: | 12 |
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| Numbering: | 90, 1 |
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| COBISS_ID: | 3581947 |
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| ISSN on article: | 1098-0121 |
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| URN: | URN:SI:UNG:REP:Q9G2XWLD |
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| DOI: | doi.org/10.1103/PhysRevB.90.014108 |
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| License: | 
This work is available under this license: Creative Commons Attribution Non-Commercial No Derivatives 4.0 International |
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| Views: | 3057 |
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| Downloads: | 0 |
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| Metadata: |     |
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| Categories: | Document is not linked to any category. |
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