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Title:EPR parameters of E' centers in v-SiO2 from first-principles calculations
Authors:Giacomazzi, Luigi (Author)
Martin-Samos, Layla (Author)
Boukenter, A. (Author)
Ouerdane, Youcef (Author)
Girard, Sylvain (Author)
Richard, Nicolas (Author)
Files:This document has no files. This document may have a phisical copy in the library of the organization, check the status via COBISS. Link is opened in a new window
Work type:Not categorized (r6)
Tipology:1.01 - Original Scientific Article
Organization:UNG - University of Nova Gorica
Keywords:silica, paramagnetic defects, EPR, disordered semiconductors
Year of publishing:2014
Number of pages:12
Numbering:90, 1
COBISS_ID:3581947 Link is opened in a new window
ISSN on article:1098-0121
URN:URN:SI:UNG:REP:Q9G2XWLD Link is opened in a new window
License:CC BY-NC-ND 4.0
This work is available under this license: Creative Commons Attribution Non-Commercial No Derivatives 4.0 International
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Record is a part of a journal

Title:Physical review
Shortened title:Phys. rev., B, Condens. matter mater. phys.
Publisher:The American Institute of Physics
COBISS.SI-ID:14196519 New window
Year of publishing:2014

Secondary language

Title:Parametri EPR dei centri E' in v-SiO2 ottenuti mediante calcoli da principi primi