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Title:EPR parameters of E' centers in v-SiO2 from first-principles calculations
Authors:ID Giacomazzi, Luigi (Author)
ID Martin-Samos, Layla (Author)
ID Boukenter, A. (Author)
ID Ouerdane, Youcef (Author)
ID Girard, Sylvain (Author)
ID Richard, Nicolas (Author)
Files: This document has no files that are freely available to the public. This document may have a physical copy in the library of the organization, check the status via COBISS. Link is opened in a new window
Work type:Not categorized
Typology:1.01 - Original Scientific Article
Organization:UNG - University of Nova Gorica
Keywords:silica, paramagnetic defects, EPR, disordered semiconductors
Publication version:Version of Record
Year of publishing:2014
Number of pages:12
Numbering:1, 90
PID:20.500.12556/RUNG-4125-b64e07f5-cdd5-f789-c893-9c8baf111929 New window
COBISS.SI-ID:3581947 New window
ISSN on article:1098-0121 New window
Publication date in RUNG:03.10.2018
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Record is a part of a journal

Title:Physical review
Shortened title:Phys. rev., B, Condens. matter mater. phys.
Publisher:The American Institute of Physics
Year of publishing:2014
COBISS.SI-ID:14196519 New window


License:CC BY-NC-ND 4.0, Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International
Description:The most restrictive Creative Commons license. This only allows people to download and share the work for no commercial gain and for no other purposes.
Licensing start date:03.10.2018

Secondary language

Title:Parametri EPR dei centri E' in v-SiO2 ottenuti mediante calcoli da principi primi