Title: | EPR parameters of E' centers in v-SiO2 from first-principles calculations |
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Authors: | Giacomazzi, Luigi (Author) Martin-Samos, Layla (Author) Boukenter, A. (Author) Ouerdane, Youcef (Author) Girard, Sylvain (Author) Richard, Nicolas (Author) |
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Files: | This document has no files. This document may have a phisical copy in the library of the organization, check the status via COBISS.  |
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Language: | English |
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Work type: | Not categorized (r6) |
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Tipology: | 1.01 - Original Scientific Article |
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Organization: | UNG - University of Nova Gorica |
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Keywords: | silica, paramagnetic defects, EPR, disordered semiconductors |
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Year of publishing: | 2014 |
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Number of pages: | 12 |
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Numbering: | 90, 1 |
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COBISS_ID: | 3581947  |
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ISSN on article: | 1098-0121 |
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URN: | URN:SI:UNG:REP:Q9G2XWLD |
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DOI: | doi.org/10.1103/PhysRevB.90.014108  |
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License: |  This work is available under this license: Creative Commons Attribution Non-Commercial No Derivatives 4.0 International |
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Views: | 3057 |
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Downloads: | 0 |
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