| Title: | Looking for a topological insulator in the tetradymite family |
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| Authors: | ID Benher, Zipporah Rini, Materials Research Laboratory, Univerza v Novi Gorici, Vipaska 11c, Ajdovsčina 5270, Slovenia (Author)
ID Gardonio, Sandra, Materials Research Laboratory, Univerza v Novi Gorici, Vipaska 11c, Ajdovsčina 5270, Slovenia (Author)
ID Fanetti, Mattia, Materials Research Laboratory, Univerza v Novi Gorici, Vipaska 11c, Ajdovsčina 5270, Slovenia (Author)
ID Sheverdyaeva, Polina M., CNR-ISM, Istituto di Struttura della Materia, S.S. 14, km 163.5, I-34149 Trieste, Italy
(Author)
ID Moras, Paolo, CNR-ISM, Istituto di Struttura della Materia, S.S. 14, km 163.5, I-34149 Trieste, Italy
(Author)
ID Valant, Matjaž, Materials Research Laboratory, Univerza v Novi Gorici, Vipaska 11c, Ajdovsčina 5270, Slovenia,Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China (Author) |
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| Files: |
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| Language: | English |
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| Work type: | Not categorized |
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| Typology: | 1.12 - Published Scientific Conference Contribution Abstract |
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| Organization: | UNG - University of Nova Gorica
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| Abstract: | Materials that are topological insulators (TI) manifest a novel state for their electrons. They possess topological surface states that are not destroyed by the presence of non-magnetic impurities on their surfaces. This unique property lies in the bulk band structure and it is typically found in narrow gap semiconductor with strong spin-orbit coupling.
Bi2Se3 and Bi2Te3 belong to the class of compounds called tetradymites and are considered as the 3D-prototypical TI materials. However, these compounds are not usually insulators but have metallic bulk conductivity as a consequence of intrinsic defect doping: vacancies and anti-site defects. For these reasons, it is difficult to electrically gate these materials for the manipulation and control of charge carriers for realizing devices. This led to the search for other topological materials, which might have better insulating behavior in their bulk.
Theoretical studies have pointed out that ternary variants of the Bi2Se3 and Bi2Te3, such as Bi2Te2Se, Bi2Te2S, Bi2Se2S Sb2Te2Se and Sb2Te2S, should be stable TIs and potentially offer a chemical way to control TI behavior, in particular by lowering native doping. Among the cited ternary compounds, Bi2Se2S should manifest a genuine topological spin-transport regime hosting an isolated Dirac cone with the Dirac point in the gap as well. However, it has been poorly studied from the TI experimental perspective.
Therefore, to uncover the full potential of the predicted topological electronic properties of the Bi-Se-S system, in this presentation we will revisit the crystallographic and electronic structure of Bi2Se3-Bi2S3 solid solutions. The combined use of bulk and surface sensitive techniques such as X-ray diffraction (XRD), low energy electron diffraction (LEED), scanning electron microscopy (SEM) with Energy Dispersive X-ray spectroscopy (EDX) and X-ray photoemission spectroscopy (XPS) was applied to analyze single crystal samples grown by us. The quality of the single crystals was suitable for rigorous measurement of the electronic properties by means of Angle Resolved Photoemission Spectroscopy. We unambiguously showed that within a certain solid solution range, the single crystals of Bi-Se-S have a rombohedral structure with the topological surface states as theoretically predicted. |
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| Keywords: | topological insulators, ternary tetradymite, electronic properties. |
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| Year of publishing: | 2019 |
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| PID: | 20.500.12556/RUNG-4929-cc68ec77-1e30-223e-e720-9eaf96cf5275 |
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| COBISS.SI-ID: | 5517819 |
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| NUK URN: | URN:SI:UNG:REP:MVZHNN6B |
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| Publication date in RUNG: | 19.12.2019 |
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| Views: | 3838 |
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| Downloads: | 0 |
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