Title: | Electronic properties of phases in the quasi-binary Bi[sub]2Se[sub]3-Bi[sub]2S[sub]3 system |
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Authors: | ID Benher, Zipporah Rini (Author) ID Gardonio, Sandra (Author) ID Fanetti, Mattia (Author) ID Moras, Paolo (Author) ID Kundu, Asish K. (Author) ID Bigi, Chiara (Author) ID Valant, Matjaž (Author) |
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Language: | English |
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Work type: | Unknown |
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Typology: | 1.01 - Original Scientific Article |
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Organization: | UNG - University of Nova Gorica
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Abstract: | We explored the properties of the quasi-binary Bi2Se3–Bi2S3 system over a wide compositional range. X-ray diffraction analysis demonstrates that rhombohedral crystals can be synthesized within the solid solution interval 0–22 mol% Bi2S3, while at 33 mol% Bi2S3 only orthorhombic crystals are obtained. Core level photoemission spectroscopy reveals the presence of Bi3+, Se2− and S2− species and the absence of metallic species, thus indicating that S incorporation into Bi2Se3 proceeds prevalently through the substitution of Se with S. Spin- and angle-resolved photoemission spectroscopy shows that topological surface states develop on the surfaces of the Bi2Se3−ySy (y ≤0.66) rhombohedral crystals, in close analogy with the prototypical case of Bi2Se3, while the orthorhombic crystals with higher S content turn out to be trivial semiconductors. Our results connect unambiguously the phase diagram and electronic properties of the Bi2Se3–Bi2S3 system. |
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Keywords: | topological insulator, quasi-binary Bi2Se3-Bi2S3 system, electronic properties |
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Year of publishing: | 2021 |
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Number of pages: | str. 3058-3064 |
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Numbering: | Vol. 9, no. 9 |
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PID: | 20.500.12556/RUNG-6373 |
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COBISS.SI-ID: | 57602051 |
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UDC: | 620.1/.2 |
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ISSN on article: | 2050-7526 |
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DOI: | 10.1039/D0TC05121G |
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NUK URN: | URN:SI:UNG:REP:FDPEOGBO |
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Publication date in RUNG: | 29.03.2021 |
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Views: | 3081 |
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Downloads: | 0 |
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