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Title:Room-temperature solid-state reaction at the Ag/Bi[sub]2Se[sub]3 interface
Authors:ID Ferfolja, Katja (Author)
ID Fanetti, Mattia (Author)
ID Mikulska, Iuliia (Author)
ID Gardonio, Sandra (Author)
ID Valant, Matjaž (Author)
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Language:English
Work type:Unknown
Typology:1.12 - Published Scientific Conference Contribution Abstract
Organization:UNG - University of Nova Gorica
Abstract:Topological insulators (TI) are materials that, while having a forbidden bandgap in bulk, are conductors at their surface due to presence of surface-localized electronic states crossing the band gap. [1] TIs are possible because of a time reversal symmetry and spin-orbit coupling, which invert bulk band states in their energy positions and make the bulk band structure non trivial. Consequently, the topological surface states (TSS) emerge on the surface of these materials. Unlike ordinary surface states, TSS cannot be destroyed by contamination or defects on the surface. Additionally, TSS are also spin polarized, which means that when applying current to TI, the current will have a well defined direction of the electron spins. The topological insulators - a relatively new class of materials - are being widely studied not only from fundamental aspects, but also from their applicative perspectives. It has been predicted that TIs could be used in fields of spintronics, electronics and catalysis. [2,3] Interestingly, only a few studies about metal/TI interfaces have been reported. This is surprising since integration of TI in the applications will often necessitate an interface with the metal, therefore, detailed knowledge on chemistry and electrical conditions at the interface will be required. In this contribution results on research on the chemistry of the Ag/Bi2Se interface will be presented, in particularonthesolid-statereactionbetweennanoparticles.IthasbeenobservedthatwhenBi2Se3 andAgare put in contact a chemical reaction occurs at the interface, producing AgBiSe2 and Ag2Se. Interestingly, the reaction already occurs at room temperature, which is not usual for solid-state reactions. In literature this reaction has not been properly described. The authors rather described it as intercalation of the silver atoms, which we have disproved and showed that recrystallization of the new phases occurs. [3,4,5] The results will alsobediscussedincomparisonwithothertwoAg/Bi2Se3 systemsunderourinvestigation:i)Agdepositedby achemicalrouteonBi2Se3 nanoflakesandii)AgdepositedfromavapourphaseinvacuumonaBi2Se3.single crystal
Keywords:topological insulators, topological surface states, solid-state reaction, TI/metal interface
Year of publishing:2017
Number of pages:Str. 1
PID:20.500.12556/RUNG-6681 New window
COBISS.SI-ID:73561603 New window
UDC:54
NUK URN:URN:SI:UNG:REP:3ZMOLEPW
Publication date in RUNG:20.08.2021
Views:3539
Downloads:0
Metadata:XML DC-XML DC-RDF
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FERFOLJA, Katja, FANETTI, Mattia, MIKULSKA, Iuliia, GARDONIO, Sandra and VALANT, Matjaž, 2017, Room-temperature solid-state reaction at the Ag/Bi[sub]2Se[sub]3 interface. In : Zbornik referatov in povzetkov [online]. Published Scientific Conference Contribution Abstract. Ljubljana. 2017. [Accessed 17 April 2025]. Retrieved from: https://repozitorij.ung.si/IzpisGradiva.php?lang=eng&id=6681
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Record is a part of a monograph

Title:Zbornik referatov in povzetkov
Editors:Venčeslav Kaučič
Place of publishing:Ljubljana
Publisher:Slovensko kemijsko društvo
Year of publishing:2017
ISBN:978-961-93849-3-0
COBISS.SI-ID:291648256 New window

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