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Title:A rational design of isoindigo-based conjugated microporous n-type semiconductors for high electron mobility and conductivity
Authors:ID Ranjeesh, Kayaramkodath C. (Author)
ID Rezk, Ayman (Author)
ID Martinez, Jose Ignacio (Author)
ID Gaber, Safa (Author)
ID Merhi, Areej (Author)
ID Škorjanc, Tina (Author)
ID Finšgar, Matjaž (Author)
ID Luckachan, Gisha Elizabeth (Author)
ID Trabolsi, Ali (Author)
ID Kaafarani, Bilal R. (Author)
Files:URL https://onlinelibrary.wiley.com/doi/full/10.1002/advs.202303562
 
.pdf Advanced_Science_-_2023_-_Ranjeesh.pdf (2,08 MB)
MD5: 721FFBE09BAB1CCF3EB9658488DDC462
 
URL https://onlinelibrary.wiley.com/doi/full/10.1002/advs.202303562
 
Language:English
Work type:Unknown
Typology:1.01 - Original Scientific Article
Organization:UNG - University of Nova Gorica
Abstract:The development of n-type organic semiconductors has evolved significantly slower in comparison to that of p-type organic semiconductors mainly due to the lack of electron-deficient building blocks with stability and processability. However, to realize a variety of organic optoelectronic devices, high-performance n-type polymer semiconductors are essential. Herein, conjugated microporous polymers (CMPs) comprising isoindigo acceptor units linked to benzene or pyrene donor units (BI and PI) showing n-type semiconducting behavior are reported. In addition, considering the challenges of deposition of a continuous and homogeneous thin film of CMPs for accurate Hall measurements, a plasma-assisted fabrication technique is developed to yield uniform thin films. The fully conjugated 2D networks in PI- and BI-CMP films display high electron mobility of 6.6 and 3.5 cm2 V−1 s−1, respectively. The higher carrier concentration in PI results in high conductivity (5.3 mS cm−1). Both experimental and computational studies are adequately combined to investigate structure–property relations for this intriguing class of materials in the context of organic electronics.
Keywords:conjugated microporous polymers, isoindigo, semiconductors, conductivity, electron mobility
Publication date:01.01.2023
Year of publishing:2023
Number of pages:str. 1-8
Numbering:Vol. 10, issue 29, [article no.] 2303562
PID:20.500.12556/RUNG-8343-72048af5-c860-d7ad-e982-4340d8584fca New window
COBISS.SI-ID:161591299 New window
UDC:54
ISSN on article:2198-3844
DOI:10.1002/advs.202303562 New window
NUK URN:URN:SI:UNG:REP:H5RR6APG
Publication date in RUNG:18.08.2023
Views:1027
Downloads:7
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Record is a part of a journal

Title:Advanced science
Publisher:Wiley-VCH
ISSN:2198-3844
COBISS.SI-ID:525092889 New window

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License:CC BY 4.0, Creative Commons Attribution 4.0 International
Link:http://creativecommons.org/licenses/by/4.0/
Description:This is the standard Creative Commons license that gives others maximum freedom to do what they want with the work as long as they credit the author.

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