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Title:Interface phenomena between CdTe and ZnTe: Cu back contact
Authors:Bosio, Alessio (Author)
Ciprian, Roberta (Author)
Lamperti, Alessio (Author)
Rago, I (Author)
Ressel, Barbara (Author)
Rosa, Greta (Author)
Stupar, Matija (Author)
Weschke, E (Author)
Files:This document has no files. This document may have a phisical copy in the library of the organization, check the status via COBISS. Link is opened in a new window
Language:English
Work type:Not categorized (r6)
Tipology:1.01 - Original Scientific Article
Organization:UNG - University of Nova Gorica
Abstract:Thin film technology has reached a maturity to achieve conversion efficiencies of the order of 22%. Among thin films, CdTe-based photovoltaic modules represent 80% of the total production. Nonetheless, some issues concerning back-contact are still open. In industrial process a chemical etching is required in order to make the CdTe film surface rich in Te. The Te-excess is fundamental in order to form a stable telluride compound with copper and to obtain an ohmic, low-resistance back-contact. Moreover, the Te-excess hinders the fast diffusion of copper in CdTe and its achievement of the junction region, preventing the destruction of the device. In this paper we study a ZnTe:Cu buffer layer deposited onto a CdTe film, characterized by a naturally Te-rich surface obtained with a particular chlorine heat treatment without any chemical etching. Copper diffusion and the CdTe/ZnTe:Cu interface were studied by x-ray
Keywords:solar cells, CdTe, ZnTe:Cu back contact
Year of publishing:2018
Number of pages:186-193
Numbering:176
COBISS_ID:5273595 Link is opened in a new window
URN:URN:SI:UNG:REP:C5HJLILL
DOI:10.1016/j.solener.2018.10.035 Link is opened in a new window
License:CC BY-NC-ND 4.0
This work is available under this license: Creative Commons Attribution Non-Commercial No Derivatives 4.0 International
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Record is a part of a journal

Title:Solar Energy
Publisher:Elsevier
Year of publishing:2018

Secondary language

Language:English
Title:Interface phenomena between CdTe and ZnTe: Cu back contact
Abstract:Thin film technology has reached a maturity to achieve conversion efficiencies of the order of 22%. Among thin films, CdTe-based photovoltaic modules represent 80% of the total production. Nonetheless, some issues concerning back-contact are still open. In industrial process a chemical etching is required in order to make the CdTe film surface rich in Te. The Te-excess is fundamental in order to form a stable telluride compound with copper and to obtain an ohmic, low-resistance back-contact. Moreover, the Te-excess hinders the fast diffusion of copper in CdTe and its achievement of the junction region, preventing the destruction of the device. In this paper we study a ZnTe:Cu buffer layer deposited onto a CdTe film, characterized by a naturally Te-rich surface obtained with a particular chlorine heat treatment without any chemical etching. Copper diffusion and the CdTe/ZnTe:Cu interface were studied by x-ray
Keywords:solar cells, CdTe, ZnTe:Cu back contact


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