Title: | Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si |
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Authors: | ID Ozden, Burcu, Department of Physics, Auburn University, Auburn, Alabama 36849, USA (Author) ID Yang, Chungman, Department of Physics, Auburn University, Auburn, Alabama 36849, USA (Author) ID Tong, Fei, Department of Physics, Auburn University, Auburn, Alabama 36849, USA (Author) ID Khanal, Min, Department of Physics, Auburn University, Auburn, Alabama 36849, USA (Author) ID Mirkhani, Vahid, Department of Physics, Auburn University, Auburn, Alabama 36849, USA (Author) ID Hassan Sk, Mobbassar, Department of Physics, Auburn University, Auburn, Alabama 36849, USA (Author) ID Ahyi, Ayayi, Department of Physics, Auburn University, Auburn, Alabama 36849, USA (Author) ID Park, Minseo, Department of Physics, Auburn University, Auburn, Alabama 36849, USA (Author) |
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Language: | English |
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Work type: | Not categorized |
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Typology: | 1.01 - Original Scientific Article |
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Organization: | UNG - University of Nova Gorica
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Keywords: | AlGaN/GaN high electron mobility transistor, Depth-resolved ultra-violet spectroscopic photo current-voltage measurement |
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Year of publishing: | 2014 |
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Number of pages: | 4 |
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Numbering: | 17, 105 |
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PID: | 20.500.12556/RUNG-2894-b26fc499-6889-4d70-ce94-54c11752b424 |
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COBISS.SI-ID: | 4634107 |
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NUK URN: | URN:SI:UNG:REP:ZUDPTIG9 |
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Publication date in RUNG: | 16.01.2017 |
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Views: | 5470 |
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Downloads: | 0 |
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