| Title: | Interface-controlled growth of organic semiconductors on graphene |
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| Authors: | ID Mathews, Jinta, UNG (Author)
ID Emin, Saim, UNG (Author)
ID Pavlica, Egon, UNG (Author)
ID Valant, Matjaž, UNG (Author)
ID Bratina, Gvido, UNG (Author) |
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| Files: |
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| Language: | English |
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| Work type: | Not categorized |
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| Typology: | 1.01 - Original Scientific Article |
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| Organization: | UNG - University of Nova Gorica
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| Abstract: | We have studied submonolayer coverages of N,N-1H,1H-perfluorobutyl dicyanoperylenecarboxydiimide (PDIF-CN2) on mechanically exfoliated graphene transferred onto SiO2 substrates. Our atomic force microscopy (AFM) data show that PDIF-CN2 forms irregularly-shaped 1.4 nm-high islands. From the selected area diffraction performed with transmission electron microscope (TEM) we conclude that this height corresponds to π−π
stacks of molecules, which are inclined for 43° relative to the graphene surface. AFM also showed complete absence of PDIF-CN2 on single-layer graphene (SLG). Electric force microscopy revealed a marked difference in surface charge density between a single-layer graphene and bilayer graphene, with a higher surface charge on SLG than on the bilayer graphene. We associate this behavior with p−
type doping of graphene due to the electrostatic dipole induced by the molecular water layer present at the graphene/SiO2 interface. The crucial role of the graphene/SiO2 interface in determining growth of PDIF-CN2 was further confirmed by TEM examination of PDIF-CN2 deposited onto unsupported SLG. |
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| Keywords: | afm, organic semiconductors, graphene |
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| Publication version: | Version of Record |
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| Year of publishing: | 2017 |
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| Number of pages: | 16 |
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| Numbering: | 0, 0 |
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| PID: | 20.500.12556/RUNG-3089-af6e5781-f85a-bb71-572d-afe42bca54c6 |
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| COBISS.SI-ID: | 4780795 |
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| DOI: | 10.1016/j.susc.2017.05.005 |
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| NUK URN: | URN:SI:UNG:REP:4QEVHK2P |
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| Publication date in RUNG: | 18.05.2017 |
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| Views: | 5588 |
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| Downloads: | 0 |
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