Title: | Interface-controlled growth of organic semiconductors on graphene |
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Authors: | Mathews, Jinta (Author) Emin, Saim (Author) Pavlica, Egon (Author) Valant, Matjaž (Author) Bratina, Gvido (Author) |
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Files: | This document has no files. This document may have a phisical copy in the library of the organization, check the status via COBISS.  |
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Language: | English |
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Work type: | Not categorized (r6) |
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Tipology: | 1.01 - Original Scientific Article |
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Organization: | UNG - University of Nova Gorica |
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Abstract: | We have studied submonolayer coverages of N,N-1H,1H-perfluorobutyl dicyanoperylenecarboxydiimide (PDIF-CN2) on mechanically exfoliated graphene transferred onto SiO2 substrates. Our atomic force microscopy (AFM) data show that PDIF-CN2 forms irregularly-shaped 1.4 nm-high islands. From the selected area diffraction performed with transmission electron microscope (TEM) we conclude that this height corresponds to π−π
stacks of molecules, which are inclined for 43° relative to the graphene surface. AFM also showed complete absence of PDIF-CN2 on single-layer graphene (SLG). Electric force microscopy revealed a marked difference in surface charge density between a single-layer graphene and bilayer graphene, with a higher surface charge on SLG than on the bilayer graphene. We associate this behavior with p−
type doping of graphene due to the electrostatic dipole induced by the molecular water layer present at the graphene/SiO2 interface. The crucial role of the graphene/SiO2 interface in determining growth of PDIF-CN2 was further confirmed by TEM examination of PDIF-CN2 deposited onto unsupported SLG. |
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Keywords: | afm, organic semiconductors, graphene |
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Year of publishing: | 2017 |
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Number of pages: | 16 |
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Numbering: | 0, 0 |
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COBISS_ID: | 4780795  |
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URN: | URN:SI:UNG:REP:4QEVHK2P |
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DOI: | 10.1016/j.susc.2017.05.005  |
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License: |  This work is available under this license: Creative Commons Attribution Non-Commercial No Derivatives 4.0 International |
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Views: | 4009 |
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Downloads: | 0 |
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