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Title:Interface phenomena between CdTe and ZnTe: Cu back contact
Authors:ID Bosio, Alessio, University of Parma (Author)
ID Ciprian, Roberta, Elettra-Sincrotrone Trieste (Author)
ID Lamperti, Alessio, CNR-IMM Agrate (Author)
ID Rago, I, Elettra-Sincrotrone Trieste (Author)
ID Ressel, Barbara, University of Nova Gorica (Author)
ID Rosa, Greta, University of Parma (Author)
ID Stupar, Matija, University of Nova Gorica (Author)
ID Weschke, E, Helmholtz Zentrum (Author)
Files: This document has no files that are freely available to the public. This document may have a physical copy in the library of the organization, check the status via COBISS. Link is opened in a new window
Language:English
Work type:Not categorized
Typology:1.01 - Original Scientific Article
Organization:UNG - University of Nova Gorica
Abstract:Thin film technology has reached a maturity to achieve conversion efficiencies of the order of 22%. Among thin films, CdTe-based photovoltaic modules represent 80% of the total production. Nonetheless, some issues concerning back-contact are still open. In industrial process a chemical etching is required in order to make the CdTe film surface rich in Te. The Te-excess is fundamental in order to form a stable telluride compound with copper and to obtain an ohmic, low-resistance back-contact. Moreover, the Te-excess hinders the fast diffusion of copper in CdTe and its achievement of the junction region, preventing the destruction of the device. In this paper we study a ZnTe:Cu buffer layer deposited onto a CdTe film, characterized by a naturally Te-rich surface obtained with a particular chlorine heat treatment without any chemical etching. Copper diffusion and the CdTe/ZnTe:Cu interface were studied by x-ray
Keywords:solar cells, CdTe, ZnTe:Cu back contact
Year of publishing:2018
Number of pages:186-193
Numbering:176
PID:20.500.12556/RUNG-4255-4400aa19-6c19-9577-1837-235048d7fe07 New window
COBISS.SI-ID:5273595 New window
DOI:10.1016/j.solener.2018.10.035 New window
NUK URN:URN:SI:UNG:REP:C5HJLILL
Publication date in RUNG:29.11.2018
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Record is a part of a journal

Title:Solar Energy
Publisher:Elsevier
Year of publishing:2018

Licences

License:CC BY-NC-ND 4.0, Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International
Link:http://creativecommons.org/licenses/by-nc-nd/4.0/
Description:The most restrictive Creative Commons license. This only allows people to download and share the work for no commercial gain and for no other purposes.
Licensing start date:29.11.2018

Secondary language

Language:English
Title:Interface phenomena between CdTe and ZnTe: Cu back contact
Abstract:Thin film technology has reached a maturity to achieve conversion efficiencies of the order of 22%. Among thin films, CdTe-based photovoltaic modules represent 80% of the total production. Nonetheless, some issues concerning back-contact are still open. In industrial process a chemical etching is required in order to make the CdTe film surface rich in Te. The Te-excess is fundamental in order to form a stable telluride compound with copper and to obtain an ohmic, low-resistance back-contact. Moreover, the Te-excess hinders the fast diffusion of copper in CdTe and its achievement of the junction region, preventing the destruction of the device. In this paper we study a ZnTe:Cu buffer layer deposited onto a CdTe film, characterized by a naturally Te-rich surface obtained with a particular chlorine heat treatment without any chemical etching. Copper diffusion and the CdTe/ZnTe:Cu interface were studied by x-ray
Keywords:solar cells, CdTe, ZnTe:Cu back contact


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