| Title: | Interface phenomena between CdTe and ZnTe: Cu back contact |
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| Authors: | ID Bosio, Alessio, University of Parma (Author)
ID Ciprian, Roberta, Elettra-Sincrotrone Trieste (Author)
ID Lamperti, Alessio, CNR-IMM Agrate (Author)
ID Rago, I, Elettra-Sincrotrone Trieste (Author)
ID Ressel, Barbara, University of Nova Gorica (Author)
ID Rosa, Greta, University of Parma (Author)
ID Stupar, Matija, University of Nova Gorica (Author)
ID Weschke, E, Helmholtz Zentrum (Author) |
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| Files: |
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| Language: | English |
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| Work type: | Not categorized |
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| Typology: | 1.01 - Original Scientific Article |
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| Organization: | UNG - University of Nova Gorica
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| Abstract: | Thin film technology has reached a maturity to achieve conversion efficiencies of the order of 22%. Among thin films, CdTe-based photovoltaic modules represent 80% of the total production. Nonetheless, some issues concerning back-contact are still open. In industrial process a chemical etching is required in order to make the CdTe film surface rich in Te. The Te-excess is fundamental in order to form a stable telluride compound with copper and to obtain an ohmic, low-resistance back-contact. Moreover, the Te-excess hinders the fast diffusion of copper in CdTe and its achievement of the junction region, preventing the destruction of the device. In this paper we study a ZnTe:Cu buffer layer deposited onto a CdTe film, characterized by a naturally Te-rich surface obtained with a particular chlorine heat treatment without any chemical etching. Copper diffusion and the CdTe/ZnTe:Cu interface were studied by x-ray |
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| Keywords: | solar cells, CdTe, ZnTe:Cu back contact |
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| Year of publishing: | 2018 |
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| Number of pages: | 186-193 |
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| Numbering: | 176 |
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| PID: | 20.500.12556/RUNG-4255-4400aa19-6c19-9577-1837-235048d7fe07 |
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| COBISS.SI-ID: | 5273595 |
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| DOI: | 10.1016/j.solener.2018.10.035 |
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| NUK URN: | URN:SI:UNG:REP:C5HJLILL |
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| Publication date in RUNG: | 29.11.2018 |
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| Views: | 4744 |
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| Downloads: | 0 |
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