| Title: | Plasma-enhanced atomic layer deposition of amorphous Ga2O3 for solar-blind photodetection |
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| Authors: | Fan, Ze-Yu (Author)
Yang, Min-Ji (Author)
Fan, Bo-Yu (Author)
Mavrič, Andraž (Author)
Pastukhova, Nadiia (Author)
Valant, Matjaž (Author)
Li, Bo-Lin (Author)
Feng, Kuang (Author)
Liu, Dong-Liang (Author)
Deng, Guang-Wei (Author)
Zhou, Qiang (Author)
Li, Yan-Bo (Author) |
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| Files: | This document has no files. This document may have a phisical copy in the library of the organization, check the status via COBISS.  |
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| Language: | English |
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| Work type: | Not categorized (r6) |
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| Tipology: | 1.01 - Original Scientific Article |
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| Organization: | UNG - University of Nova Gorica |
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| Abstract: | Wide-bandgap gallium oxide (Ga2O3) is one of the most promising semiconductor materials for solar-blind (200 nm–280 nm) photodetection. In its amorphous form, a-Ga2O3 maintains its intrinsic optoelectronic properties while can be prepared at a low growth temperature, thus is compatible with Si integrated circuits (ICs) technology. Herein, the a-Ga2O3 film is directly deposited on pre-fabricated Au interdigital electrodes by plasma enhanced atomic layer deposition (PE-ALD) at a growth temperature of 250 °C. The stoichiometric a-Ga2O3 thin film with a low defect density is achieved owing to the mild PE-ALD condition. As a result, the fabricated Au/a-Ga2O3/Au photodetector shows a fast time response, high responsivity, and excellent wavelength selectivity for solar-blind photodetection. Furthermore, an ultra-thin MgO layer is deposited by PE-ALD to passivate the Au/a-Ga2O3/Au interface, resulting in the responsivity of 788 A/W (under 254 nm at 10 V), a 250-nm-to-400-nm rejection ratio of 9.2×103, and the rise time and the decay time of 32 ms and 6 ms, respectively. These results demonstrate that the a-Ga2O3 film grown by PE-ALD is a promising candidate for high-performance solar-blind photodetection and potentially can be integrated with Si ICs for commercial production. |
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| Keywords: | Amorphous gallium oxide, Passivation layer, Plasma enhanced atomic layer deposition, Responsivity, Solar-blind photodetector |
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| Year of publishing: | 2022 |
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| Number of pages: | 100176-100176 |
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| Numbering: | 2022 |
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| COBISS_ID: | 126949891 |
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| URN: | URN:SI:UNG:REP:FSWGDR60 |
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| DOI: | 10.1016/j.jnlest.2022.100176 |
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| Views: | 411 |
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| Downloads: | 0 |
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