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Title:Plasma-enhanced atomic layer deposition of amorphous Ga2O3 for solar-blind photodetection
Authors:ID Fan, Ze-Yu, Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China (Author)
ID Yang, Min-Ji, Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China (Author)
ID Fan, Bo-Yu, Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China (Author)
ID Mavrič, Andraž, University of Nova Gorica, Nova Gorica SI, 5000, Slovenia (Author)
ID Pastukhova, Nadiia, University of Nova Gorica, Nova Gorica SI, 5000, Slovenia (Author)
ID Valant, Matjaž, University of Nova Gorica, Nova Gorica SI, 5000, Slovenia (Author)
ID Li, Bo-Lin, Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China (Author)
ID Feng, Kuang, Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China (Author)
ID Liu, Dong-Liang, Yangtza Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou, 313001, China (Author)
ID Deng, Guang-Wei, Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China (Author)
ID Zhou, Qiang, Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China (Author)
ID Li, Yan-Bo, Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China (Author)
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Language:English
Work type:Not categorized
Typology:1.01 - Original Scientific Article
Organization:UNG - University of Nova Gorica
Abstract:Wide-bandgap gallium oxide (Ga2O3) is one of the most promising semiconductor materials for solar-blind (200 nm–280 nm) photodetection. In its amorphous form, a-Ga2O3 maintains its intrinsic optoelectronic properties while can be prepared at a low growth temperature, thus is compatible with Si integrated circuits (ICs) technology. Herein, the a-Ga2O3 film is directly deposited on pre-fabricated Au interdigital electrodes by plasma enhanced atomic layer deposition (PE-ALD) at a growth temperature of 250 °C. The stoichiometric a-Ga2O3 thin film with a low defect density is achieved owing to the mild PE-ALD condition. As a result, the fabricated Au/a-Ga2O3/Au photodetector shows a fast time response, high responsivity, and excellent wavelength selectivity for solar-blind photodetection. Furthermore, an ultra-thin MgO layer is deposited by PE-ALD to passivate the Au/a-Ga2O3/Au interface, resulting in the responsivity of 788 A/W (under 254 nm at 10 V), a 250-nm-to-400-nm rejection ratio of 9.2×103, and the rise time and the decay time of 32 ms and 6 ms, respectively. These results demonstrate that the a-Ga2O3 film grown by PE-ALD is a promising candidate for high-performance solar-blind photodetection and potentially can be integrated with Si ICs for commercial production.
Keywords:Amorphous gallium oxide, Passivation layer, Plasma enhanced atomic layer deposition, Responsivity, Solar-blind photodetector
Publication version:Version of Record
Year of publishing:2022
Number of pages:100176-100176
Numbering:2022
PID:20.500.12556/RUNG-7681 New window
COBISS.SI-ID:126949891 New window
DOI:10.1016/j.jnlest.2022.100176 New window
NUK URN:URN:SI:UNG:REP:FSWGDR60
Publication date in RUNG:25.10.2022
Views:1219
Downloads:0
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Record is a part of a journal

Title:Journal of Electronic Science and Technology
Year of publishing:2022

Document is financed by a project

Funder:ARRS - Slovenian Research Agency
Project number:P2-0412, J2-2498, Z1-3189

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