Repository of University of Nova Gorica

Show document
A+ | A- | Help | SLO | ENG

Title:Tunable emissive ▫$CsPbBr_3 /Cs_4PbBr_6$▫ quantum dots engineered by discrete phase transformation for enhanced photogating in field-effect phototransistors
Authors:ID Xiao, Han (Author)
ID Wan, Siyuan (Author)
ID He, Lin (Author)
ID Zou, Junlong (Author)
ID Mavrič, Andraž (Author)
ID Wang, Yixi (Author)
ID Piotrowski, Marek (Author)
ID Kumar Bandela, Anil (Author)
ID Samorì, Paolo (Author)
ID Wang, Zhiming M. (Author), et al.
Files:URL https://onlinelibrary.wiley.com/doi/epdf/10.1002/advs.202401973
 
.pdf 10.1002.advs.202401973.pdf (4,02 MB)
MD5: DE9DEEB065D14826A7EA621AA505D6E3
 
.pdf lanek.pdf (15,30 MB)
MD5: 8F0079518C72A5FFBEEF5A322221D98A
 
This document has even more files. Complete list of files is available below.
Language:English
Work type:Unknown
Typology:1.01 - Original Scientific Article
Organization:UNG - University of Nova Gorica
Abstract:Precise control of quantum structures in hybrid nanocrystals requires advancements in scientific methodologies. Here, on the design of tunable CsPbBr3/Cs4PbBr6 quantum dots are reported by developing a unique discrete phase transformation approach in Cs4PbBr6 nanocrystals. Unlike conventional hybrid systems that emit solely in the green region, this current strategy produces adjustable luminescence in the blue (450 nm), cyan (480 nm), and green (510 nm) regions with high photoluminescence quantum yields up to 45%, 60%, and 85%, respectively. Concentration‐dependent studies reveal that phase transformation mechanisms and the factors that drive CsBr removal occur at lower dilutions while the dissolution–recrystallization process dominates at higher dilutions. When the polymer‐CsPbBr3/Cs4PbBr6 integrated into a field‐effected transistor the resulting phototransistors featured enhanced photosensitivity exceeding 105, being the highest reported for an n‐type phototransistor, while maintaining good transistor performances as compared to devices consisting of polymer‐CsPbBr3 NCs.
Keywords:crystallization mechanisms, dilution-induced kinetic trapping, photogating effect, phototransistors, quantum dots
Publication status:Published
Publication version:Version of Record
Publication date:01.01.2024
Year of publishing:2024
Number of pages:str. 1-12
Numbering:Vol. 11, issue 32, [article no.] 2401973
PID:20.500.12556/RUNG-9152 New window
COBISS.SI-ID:199901955 New window
ISSN:2198-3844
UDC:53
ISSN on article:2198-3844
eISSN:2198-3844
DOI:10.1002/advs.202401973 New window
NUK URN:URN:SI:UNG:REP:EVBDZQNY
Publication date in RUNG:26.06.2024
Views:975
Downloads:11
Metadata:XML DC-XML DC-RDF
:
Copy citation
  
Average score:(0 votes)
Your score:Voting is allowed only for logged in users.
Share:Bookmark and Share


Hover the mouse pointer over a document title to show the abstract or click on the title to get all document metadata.

Record is a part of a journal

Title:Advanced science
Publisher:Wiley-VCH
ISSN:2198-3844
COBISS.SI-ID:525092889 New window

Document is financed by a project

Funder:ARIS - Slovenian Research and Innovation Agency
Funding programme:Raziskovalni program
Project number:P2-0412
Name:Heterogeni procesi na površinah trdnin za trajnostne tehnologije

Licences

License:CC BY 4.0, Creative Commons Attribution 4.0 International
Link:http://creativecommons.org/licenses/by/4.0/
Description:This is the standard Creative Commons license that gives others maximum freedom to do what they want with the work as long as they credit the author.
Licensing start date:21.06.2024

Files

Loading...

Back